@article{oai:osu.repo.nii.ac.jp:00001423,
 author = {田中, 武雄 and 大谷, 浩司 and 安元, 培 and 福田, 和悟 and タナカ, タケオ and オオタニ, コウジ and ヤスモト, ツチカ and フクダ, ヤスノリ and TANAKA, Takeo and OHOTANI, Khoji and YASUMOTO, Tsuchika and FUKUDA, Yasunori},
 journal = {大阪産業大学論集. 自然科学編},
 month = {Mar},
 note = {P(論文), A study on thermoluminescence (TL) and thermally stimulated exoelectron emission (TSEE) has been performed for LiF single crystal irradiated by focused Ga^+ ion beam (FIB). The result indicates that the intensities of TL and TSEE glow spectra depend strongly on the accelerating voltage of FIB. A 40keV beam of Ga^+ ions leads a very intensive peak of TSEE glow around 725K. A beam defining aperture with 300μm size in diameter also leads a more intensive peak of TSEE glow around 640K. The TSEE glow may be attributed to F_A center induced by implantation of Ga^+ ions.},
 pages = {1--10},
 title = {FIBによりGa^+イオンビーム照射されたLiFのTLおよびTSEE},
 volume = {124},
 year = {2013}
}