@article{oai:osu.repo.nii.ac.jp:00001403,
 author = {一井, 直弥 and 上西, 俊道 and 青木, 孝憲 and 鈴木, 晶雄 and 松下, 辰彦 and イチイ, ナオヤ and カミニシ, トシミチ and アオキ, タカノリ and スズキ, アキオ and マツシタ, タツヒコ and ICHII, Naoya and KAMINISHI, Toshimichi and AOKI, Takanori and SUZUKI, Akio and MATSUSHITA, Tatsuhiko},
 journal = {大阪産業大学論集. 自然科学編},
 month = {Feb},
 note = {P(論文), Zinc oxide (ZnO) and Al-doped zinc oxide (AZO) films were in turn deposited on cycloolefin polymer (COP) substrates by means of pulsed laser deposition (PLD) using an ArF excimer laser (λ=193 nm). In the laminated AZO/ZnO structure with ultra-thin layer of AZO (20 nm-thick), resistivity of 1.03×10^<-3> Ω・cm, Hall mobility of 20.1 cm^2/V・s, and carrier density of 2.46×10^<20> cm^<-3> were obtained. Ga-doped zinc oxide (GZO) thin films were deposited on COP substrates at room temperature by means of PLD using FHG of Nd: YAG laser (λ=266 nm, laser energy density 2～16 mJ/cm^2) at room temperature. As a result, the resistivity was improved from 6.61×10^<-4> Ω・cm to 5.94×10^4 Ω・cm for films annealed at a laser energy density of 12 mJ/cm^2.},
 pages = {29--40},
 title = {COP基板上に成膜した酸化亜鉛系透明導電膜},
 volume = {122},
 year = {2010}
}