@article{oai:osu.repo.nii.ac.jp:00001312,
 author = {鈴木, 晶雄 and 松下, 辰彦 and 青木, 孝憲 and 安倉, 秀明 and 奥田, 昌宏 and スズキ, アキオ and マツシタ, タツヒコ and アオキ, タカノリ and アグラ, ヒデアキ and オクダ, マサヒロ and SUZUKI, Akio and MATSUSHITA, Tatsuhiko and AOKI, Takanori and AGURA, Hideaki and OKUDA, Masahiro},
 journal = {大阪産業大学論集. 自然科学編},
 month = {Feb},
 note = {P(論文), In a bid obtain resistivity of on the order of 10^<-5> Ω・cm, we fabricated a series of transparent conducting films from indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) by pulsed laser deposition (PLD) using an ArF excimer laser (λ=193 nm). With this method, a magnetic field generated by powerful permanent magnets of rare-earth (NdFeB: 1.25 T) was applied perpendicularly to the plume generated between the target and substrate. The flying particles and clusters subjected to Lorentz force are thought to be associated with complicated evaporation processes. Using this method, we obtained an ITO film with a resistivity of 7.2×10^<-5> Ω・cm was obtained. However, the film resistivity obtained by this method was not always reproducible. In an attempt to improve the reproducibility, we adopted a target-to-substrate (T-S) distance of 10 mm instead of the 40～80 mm distance used beforehand. Under this new condition, the substrate was instantaneously exposed to the plume at high temperature. Upon receiving the thermal energies within the plume, the crystallization properties of the films improved and the values of carrier concentration increased. Statistically, our method had a 75 % probability of obtaining ITO films with a resistivity on the order of 10^<-5> Ω・cm. In the fabrication of AZO films, a resistivity of 8.54×10^<-5> Ω・cm was obtained by optimizing the applied magnetic field, T-S distance, and other preparation conditions.},
 pages = {11--25},
 title = {Low Resistivity Transparent Conducting Oxide Thin Films Prepared by Pulsed Laser Deposition},
 volume = {115},
 year = {2004}
}