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Low Resistivity Transparent Conducting Oxide Thin Films Prepared by Pulsed Laser Deposition
https://osu.repo.nii.ac.jp/records/1312
https://osu.repo.nii.ac.jp/records/1312257c5ea0-c175-4530-8d01-3483f28fde87
名前 / ファイル | ライセンス | アクション |
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KJ00004175692.pdf (1.3 MB)
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Item type | 紀要論文(ELS) / Departmental Bulletin Paper(1) | |||||
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公開日 | 2004-02-28 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Low Resistivity Transparent Conducting Oxide Thin Films Prepared by Pulsed Laser Deposition | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Low resistivity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Indium tin oxide films | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Al-doped zinc oxide film | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Pulsed laser deposition | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Surface flatness | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Interaction between plume and magnetic field | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Target-to-substrate distance | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Liquid crystal transparent electrode | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Organic electroluminescence transparent anode | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | High deposition rate | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ページ属性 | ||||||
内容記述タイプ | Other | |||||
内容記述 | P(論文) | |||||
記事種別(日) | ||||||
論文 | ||||||
記事種別(英) | ||||||
en | ||||||
Article | ||||||
論文名よみ | ||||||
その他のタイトル | Low Resistivity Transparent Conducting Oxide Thin Films Prepared by Pulsed Laser Deposition | |||||
著者名(日) |
鈴木, 晶雄
× 鈴木, 晶雄× 松下, 辰彦× 青木, 孝憲× 安倉, 秀明× 奥田, 昌宏 |
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著者名よみ |
スズキ, アキオ
× スズキ, アキオ× マツシタ, タツヒコ× アオキ, タカノリ× アグラ, ヒデアキ× オクダ, マサヒロ |
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著者名(英) |
SUZUKI, Akio
× SUZUKI, Akio× MATSUSHITA, Tatsuhiko× AOKI, Takanori× AGURA, Hideaki× OKUDA, Masahiro |
|||||
著者所属(日) | ||||||
大阪産業大学工学部電気電子工学科 | ||||||
著者所属(日) | ||||||
大阪産業大学工学部電気電子工学科 | ||||||
著者所属(日) | ||||||
大阪産業大学工学部電気電子工学科 | ||||||
著者所属(日) | ||||||
大阪産業大学大学院工学研究科 | ||||||
著者所属(日) | ||||||
大阪府立大学 | ||||||
著者所属(英) | ||||||
en | ||||||
Department of Electrical Engineering and Electronics, Osaka Sangyo University | ||||||
著者所属(英) | ||||||
en | ||||||
Department of Electrical Engineering and Electronics, Osaka Sangyo University | ||||||
著者所属(英) | ||||||
en | ||||||
Department of Electrical Engineering and Electronics, Osaka Sangyo University | ||||||
著者所属(英) | ||||||
en | ||||||
Department of Electrical Engineering and Electronics, Osaka Sangyo University | ||||||
著者所属(英) | ||||||
en | ||||||
Department of Physics and Electronics, Osaka Prefecture University | ||||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | In a bid obtain resistivity of on the order of 10^<-5> Ω・cm, we fabricated a series of transparent conducting films from indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) by pulsed laser deposition (PLD) using an ArF excimer laser (λ=193 nm). With this method, a magnetic field generated by powerful permanent magnets of rare-earth (NdFeB: 1.25 T) was applied perpendicularly to the plume generated between the target and substrate. The flying particles and clusters subjected to Lorentz force are thought to be associated with complicated evaporation processes. Using this method, we obtained an ITO film with a resistivity of 7.2×10^<-5> Ω・cm was obtained. However, the film resistivity obtained by this method was not always reproducible. In an attempt to improve the reproducibility, we adopted a target-to-substrate (T-S) distance of 10 mm instead of the 40~80 mm distance used beforehand. Under this new condition, the substrate was instantaneously exposed to the plume at high temperature. Upon receiving the thermal energies within the plume, the crystallization properties of the films improved and the values of carrier concentration increased. Statistically, our method had a 75 % probability of obtaining ITO films with a resistivity on the order of 10^<-5> Ω・cm. In the fabrication of AZO films, a resistivity of 8.54×10^<-5> Ω・cm was obtained by optimizing the applied magnetic field, T-S distance, and other preparation conditions. | |||||
雑誌書誌ID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN0002870X | |||||
書誌情報 |
大阪産業大学論集. 自然科学編 巻 115, p. 11-25, 発行日 2004-02-28 |